Silicon surface passivation by silicon nitride deposition

Silicon nitride deposition was studied as a method of passivation for silicon solar cell surfaces. The following three objectives were the thrust of the research: (1) the use of pecvd silicon nitride for passivation of silicon surfaces; (2) measurement techniques for surface recombination velocity; and (3) the importance of surface passivation to high efficiency solar cells

High-efficiency silicon solar cells

Fabrication and characterization of high-efficiency metal insulator, n-p (MINP) cells is described. Particular attention was paid to development of measurement methods for surface recombination and density of surface states. A modified Rosier test structure was used successfully for density of surface states. Silicon oxide and silicon nitride passivants were studied. Heat treatment after plasma enhanced chemical vapor deposition (CVD) of silicon nitride was shown to be beneficial. A more optimum emitter concentration profile was modeled

On the consequences of bi-Maxwellian plasma distributions for parallel electric fields

The objective is to use the measurements of the equatorial particle distributions to obtain the parallel electric field structure and the evolution of the plasma distribution function along the field line. Appropriate uses of kinetic theory allows us to use the measured ( and inferred) particle distributions to obtain the electric field, and hence the variation on plasma density along the magnetic field line. The approach, here, is to utilize the adiabatic invariants, and assume the plasma distributions are in equilibrium

SiN sub x passivation of silicon surfaces

The objectives were to perform surface characterization of high efficiency n+/p and p+/n silicon cells, to relate surface density to substrate dopant concentration, and to identify dominant current loss mechanisms in high efficiency cells. The approach was to measure density of states on homogeneously doped substrates with high frequency C-V and Al/SiN sub x/Si structures; to investigate density of states and photoresponse of high efficiency N+/P and P+/N cells; and to conduct I-V-T studies to identify current loss nechanisms in high efficiency cells. Results are given in tables and graphs

Current limiting mechanisms in electron and ion beam experiments

The emission and collection of current from satellites or rockets in the ionosphere is a process which, at equilibrium, requires a balance between inward and outward currents. In most active experiments in the ionosphere and magnetosphere, the emitted current exceeds the integrated thermal current by one or more orders of magnitude. The system response is typically for the emitted current to be limited by processes such as differential charging of insulating surfaces, interactions between an emitted beam and the local plasma, and interactions between the beam and local neutral gas. These current limiting mechanisms have been illustrated for 20 years in sounding rocket and satellite experiments, which are reviewed here. Detailed presentations of the Spacecraft Charging at High Altitude (SCATHA) electron and ion gun experiments are used to demonstrate the general range of observed phenomena

Quantum behaviour of open pumped and damped Bose-Hubbard trimers

We propose and analyse analogs of optical cavities for atoms using three-well inline Bose-Hubbard models with pumping and losses. With one well pumped and one damped, we find that both the mean-field dynamics and the quantum statistics show a qualitative dependence on the choice of damped well. The systems we analyse remain far from equilibrium, although most do enter a steady-state regime. We find quadrature squeezing, bipartite and tripartite inseparability and entanglement, and states exhibiting the EPR paradox, depending on the parameter regimes. We also discover situations where the mean-field solutions of our models are noticeably different from the quantum solutions for the mean fields. Due to recent experimental advances, it should be possible to demonstrate the effects we predict and investigate in this article.Comment: 20 pages, 8 figures, theoretica

Active experiments in modifying spacecraft potential: Results from ATS-5 and ATS-6

The processing of data from onboard spacecraft instruments are described. The modification of spacecraft potentials is reviewed. Analysis of this data yielded the following results: (1) electron emission (E approximately 10 electron-volts) did not perturb the status of a satellite at low potential the absolute value of phi approximately 50 volts by more than 50 volts (the ATS 5 low energy limit), (2) emission of a low energy plasma (E approximatey 10 volts) does not change low potentials (the absolute value of phi approximately 5 volts) by more than a few volts (ATS 6 low energy resolution), (3) when ATS 6 entered eclipse in the presence of a high energy plasma (10 keV), the neutralizer suppressed any rise in the absolute value of phi (within a few volts resolution), (4) when the electron emitter on ATS 5 operated, it served to discharge negative potentials from thousands to hundreds of volts, and (5) when the neutralizer on ATS 6 was operated, it served to discharge kilovolt potentials to below 50 volts. Low altitude (100 - 300 km) experiments with KV electron beams are studied. Differential charging was eliminated by the operation of the main thruster on ATS 6 clamped on the spacecraft at -5 volts